ds30109 rev. 6 - 2 1 of 4 MMDT2907A www.diodes.com diodes incorporated epitaxial planar die construction ideal for low power amplification and switching ultra-small surface mount package also available in lead free version features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f c 2 c 2 b 1 b 1 e 1 e 1 e 2 e 2 b 2 b 2 c 1 c 1 mechanical data case: sot-363, molded plastic case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram marking (see page 2): k2f ordering & date code information: see page 2 weight: 0.006 grams (approx.) MMDT2907A dual pnp small signal surface mount transistor characteristic symbol MMDT2907A unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5.0 v collector current - continuous (note 1) i c -600 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm
ds30109 rev. 6 - 2 2 of 4 MMDT2907A www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo -60 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -10 na a v cb = -50v, i e = 0 v cb = -50v, i e = 0, t a = 125 c collector cutoff current i cex -50 na v ce = -30v, v eb(off) = -0.5v base cutoff current i bl -50 na v ce = -30v, v eb(off) = -0.5v on characteristics (note 2) dc current gain h fe 75 100 100 100 50 300 i c = -100a, v ce = -10v i c = -1.0ma, v ce = -10v i c = -10ma, v ce = -10v i c = -150ma, v ce = -10v i c = -500ma, v ce = -10v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) -1.3 -2.6 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8.0 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?30pf v eb = -2.0v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 200 mhz v ce = -20v, i c = -50ma, f = 100mhz switching characteristics turn-on time t off 45 ns delay time t d 10 ns v cc = -30v, i c = -150ma, i b1 = -15ma rise time t r 40 ns turn-off time t off 100 ns notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number a bove. example: MMDT2907A-7-f. device packaging shipping MMDT2907A-7 sot-363 3000/tape & reel ordering information (note 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw date code key k2f = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k2f ym k2f ym marking information
ds30109 rev. 6 - 2 3 of 4 MMDT2907A www.diodes.com 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0 i , base current (ma) b fig. 3 typical collector saturation region v,c o llect o r-emitter v o ltage (v) ce 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 i=1ma c i=10ma c i = 30ma c i = 100ma c i = 300ma c 1.0 5.0 20 10 30 -0.1 -10 -1.0 -30 c , c apa c itan c e ( pf ) reverse volts (v) fig. 2 typical capacitance cobo cibo
ds30109 rev. 6 - 2 4 of 4 MMDT2907A www.diodes.com 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 7, gain bandwidth product vs. collector current v=5v ce 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fig. 6, base emitter voltage vs. collector current v=5v ce t = 150c a t = 25c a t = -50c a 1 10 1000 100 1 10 1000 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 5, dc current gain vs collector current v= 5v ce t= 150c a t= 25c a t= -50c a 0 0.1 0.2 0.3 0.6 0.5 0.4 1 10 100 1000 i , collector current (ma) c fig. 4, collector emitter saturation voltage vs. collector current v,c o llect o rt o emitter ce(sat) saturation voltage (v) i c i b =10 t = 150c a t=25c a t = -50c a
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